DiamNEX - 鑽耐科思

DiamNEX - 鑽耐科思DiamNEX - 鑽耐科思DiamNEX - 鑽耐科思

DiamNEX - 鑽耐科思

DiamNEX - 鑽耐科思DiamNEX - 鑽耐科思DiamNEX - 鑽耐科思
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Product Features

Ra<1nm,Sub-nanometer surface roughness

Our diamond films have excellent flatness and can meet the stringent surface roughness requirements of existing semiconductor processes, thus realizing a high degree of compatibility with mainstream semiconductor manufacturing processes.

Approximate optical, electrical, and thermal properties of single crystals

Diamond is recognized as the fourth generation of semiconductor materials due to its excellent electrical and thermal properties. It has proven its ability to meet the needs of high-performance applications in the semiconductor and optical fields.

Compatible with Semiconductor Processes

Our ultra-flat, large-size diamond films can be used in a variety of advanced applications through photolithography and other micro-nanofabrication techniques to construct complex nanostructures on surfaces, such as super-surfaces, superlenses, and waveguide resonators.

Doped boron to form P-type semiconductors

Diamond usually behaves as an insulator due to its ultra-wideband property, but it can be doped with specific elements to give it semiconductor properties. For example, our diamond films have successfully achieved P-type semiconductor properties by doping with boron atoms.
 

Film is flexible and bendable

Our diamond films are flexible, can be bent 360 degrees, and have been verified that their forbidden bandwidth can be adjusted through elastic strain engineering for use in flexible electronic devices and wearable devices.

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